| PART |
Description |
Maker |
| SIDC56D170E6 SIDC56D170E608 |
Fast switching diode chip in Emitter Controlled -Technology
|
Infineon Technologies AG
|
| 2SB1202 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| SIDC07D60AF6 SIDC07D60AF610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| 2SB1215 |
Low collector-to-emitter saturation voltage. Excllent linearity of hFE. Fast switching time.
|
TY Semiconductor Co., L...
|
| IKY75N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| SGSIF461 |
Fast-Switch Hollow-Emitter NPN Transistor(快速开关空射极NPN晶体
|
意法半导
|
| SGSF423 |
(SGSF323 / SGSF423) Fast Switch Hollow Emitter NPN Transistors
|
ST Microelectronics
|
| TF92125H TF921 TF92122H TF92124H |
Fast Switching Thyristor
2200V fast switching thyristor
2400V fast switching thyristor
2500V fast switching thyristor
|
DYNEX[Dynex Semiconductor]
|
| FD150R12RT4 |
34mm Module with fast Trench/Feldstopp IGBT4 and Emitter Controlled 4 diode
|
Infineon Technologies AG
|
| FZ1500R33HE3 |
IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode
|
Infineon Technologies AG
|
| FF200R17KE4 |
62mm C-Series module with fast trench/fieldstop IGBT4 and Emitter Controlled 4 diode
|
Infineon Technologies AG
|
| 0263.375TX832 026301.5TX832 263.125 0263.125TX832 |
FUSE 375MA VERY FAST
Low-Input-Voltage, 300mA LDO Regulators with RESET in SOT and TDFN
FUSE 125MA VERY FAST
FUSE 750MA VERY FAST
FUSE 500MA VERY FAST
FUSE 250MA VERY FAST
FUSE 62MA VERY FAST
FUSE 3.5A VERY FAST
FUSE 5.0A VERY FAST
FUSE 3.0A VERY FAST
FUSE 2.0A VERY FAST
FUSE 1.0A VERY FAST
FUSE 4.0A VERY FAST
FUSE 2.5A VERY FAST 特快速保险丝.5a
FUSE 1.5A VERY FAST 保险.5A非常快
|
Littelfuse, Inc.
KEMET Corporation
|
